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TPS816 데이터 시트보기 (PDF) - Toshiba
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TPS816
TOSHIBA Photo-IC Silicon Epitaxial Planar
Toshiba
TPS816 Datasheet PDF : 6 Pages
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2
3
4
5
6
Radiation pattern - vertical direction (typ.)
Ta
=
25°C
20
°
10
°
0
°
10
°
20
°
30
°
30
°
40
°
40
°
50
°
50
°
60
°
60
°
70
°
70
°
80
°
80
°
90
°
90
°
0 0.2 0.4 0.6 0.8 1.0
Relative sensitivity
TPS816(F)
Radiation pattern - horizontal direction (typ.)
Ta
=
25°C
20
°
10
°
0
°
10
°
20
°
30
°
30
°
40
°
40
°
50
°
50
°
60
°
60
°
70
°
70
°
80
°
80
°
90
°
90
°
0 0.2 0.4 0.6 0.8 1.0
Relative sensitivity
I
E
– d
1000
500
300
EHL
=
0.6
μ
W/mm
2
100
50
1
30
(typ.)
VCC
=
5 V
10
1
35
10
30 50 100
Radiant incidence IE (mW/sr)
5
2007-10-01
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