FDS4501H 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4501H

Complementary PowerTrenchÒÒ Half-Bridge MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BV DSS

Drain-Source Breakdown

VGS = 0 V, ID = 250 µA

Q1

Voltage

VGS = 0 V, ID = –250 µA

Q2

∆BV DSS

∆TJ

Breakdown Voltage

Temperature Coefficient

ID = 250 µA, Referenced to 25°C

Q1

ID = –250 µA, Referenced to 25°C Q2

IDSS

Zero Gate Voltage Drain

VDS = 24 V, VGS = 0 V

Q1

Current

VDS = –16 V, V GS = 0 V

Q2

IGSS

Gate-Body Leakage

VGS = +20 V, V DS = 0 V

Q1

VGS = +8 V, V DS = 0 V

Q2

On Characteristics (Note 2)

V GS(th)

Gate Threshold Voltage

∆V GS(th)

∆TJ

RDS(on)

Gate Threshold Voltage

Temperature Coefficient

Static Drain-Source

On-Resistance

ID(on)

On-State Drain Current

gFS

Forward Transconductance

VDS = VGS, ID = 250 µA

Q1

VDS = VGS, ID = –250 µA

Q2

ID = 250 µA, Referenced to 25°C

Q1

ID = –250 µA, Referenced to 25°C Q2

VGS = 10 V, ID = 9.3 A

Q1

VGS = 10 V, ID = 9.3 A, TJ = 125°C

VGS = 4.5 V, ID = 7.6 A

VGS = –4.5 V, ID = –5.6 A

Q2

VGS = –4.5 V, ID = –5.6 A, TJ = 125°C

VGS = –2.5 V, ID = –5.0 A

VGS = 10 V, VDS = 5 V

Q1

VGS = –4.5 V, VDS = –5 V

Q2

VDS = 5 V, ID = 9.3 A

Q1

VDS = 5 V, ID = –5.6 A

Q2

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 10 V, VGS = 0 V,

Q1

f = 1.0 MHz

Q2

Coss

Output Capacitance

Q1

Q2

Crss

Reverse Transfer Capacitance

Q1

Q2

30

V

–20

24

–13

mV/°C

1

µA

–1

+100 nA

+100

1 1.6 3

V

–0.4 –0.7 –1.5

–4

mV/°C

3

14 18 mΩ

21 29

17 23

36 46

49 80

47 63

20

A

–20

28

S

16

1958

pF

1312

424

pF

240

182

pF

106

FDS4501H Rev C(W)

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