FDS4501H 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4501H Datasheet PDF : 8 Pages
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Typical Characteristics: Q1
21
VGS = 10.0V
18
6.0V
4.5V
15
3.5V
3.0V
12
9
6
2.5V
3
0
0
0.5
1
1.5
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
4
3.5
VGS = 2.5V
3
2.5
2
1.5
1
0.5
0
5
3.0V
3.5V
4.5V
6.0V 10V
10
15
20
25
ID, DIRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 9.3A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T J, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
0.08
0.06
ID = 4.7A
0.04
T A = 125oC
0.02
TA = 25 oC
0
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
25
VDS = 5.0V
20
15
T A = -55oC
25oC
125oC
10
5
0
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55 oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
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