MJE243G 데이터 시트보기 (PDF) - ON Semiconductor

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MJE243G

Complementary Silicon Power Plastic Transistors

ON Semiconductor 

MJE243 − NPN, MJE253 − PNP

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125_C)

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

Base−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Symbol

VCEO(sus)

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

Min

Max

100

−

−

0.1

−

0.1

−

0.1

40

180

15

−

−

0.3

−

0.6

−

1.8

−

1.5

40

−

−

50

Unit

V

mA

mA

mAdc

−

V

V

V

MHz

pF

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