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TSDF1205(2000) 데이터 시트보기 (PDF) - Vishay Semiconductors

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TSDF1205
(Rev.:2000)
Vishay
Vishay Semiconductors Vishay
TSDF1205 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
m plated with 35 m Cu
RthJA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 12 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 2 V, IC = 2 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
2 mA
V(BR)CEO 4
V
VCEsat
0.1 0.5 V
hFE 50 120 250
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Test Conditions
VCE = 2 V, IC = 5 mA, f = 1 GHz
VCB = 1 V, f = 1 MHz
VCE = 1 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
W VCE = 2 V, IC = 2 mA, ZS = ZSopt,
ZL = 50 , f = 2 GHz
VCE = 2 V, IC = 2 mA,
f = 2 GHz (@Fopt)
VCE = 2 V, IC = 5 mA, ZS = ZSopt,
W ZL = 50 f = 2 GHz
W VCE = 2 V, IC = 5 mA, Z0 = 50 ,
f = 2 GHz
Symbol Min Typ Max Unit
fT
12
GHz
Ccb
0.2
pF
Cce
0.35
pF
Ceb
0.15
pF
F
1.3
dB
Gpe
13
dB
Gpe
11.5
dB
S21e2
12.5
dB
www.vishay.de FaxBack +1-408-970-5600
2 (6)
Document Number 85065
Rev. 5, 30-Jun-00

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