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TSH345(2007) 데이터 시트보기 (PDF) - STMicroelectronics

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TSH345 Datasheet PDF : 14 Pages
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TSH345
2
Electrical characteristics
Electrical characteristics
Table 3.
Symbol
Electrical characteristics at VCC = +5 V single supply, Tamb = 25°C
(unless otherwise specified)
Test conditions
Min. Typ. Max. Unit
DC performance
Output DC shift
VDC
RL = 150 Ω, Tamb
-40° C < Tamb < +85° C
197 329 389 mV
405
Input bias current
Iib
Tamb , input to GND
-40° C < Tamb < +85° C
Rin
Input resistance, Tamb
0.85 1.5 2.9
µA
2.38
12.6
GΩ
Cin
Input capacitance, Tamb
0.1
pF
Total supply current
ICC
No load, input to GND
-40°C < Tamb < +85°C
50.7 65
mA
TBD
Power supply rejection ratio 20 log (ΔVout/ΔVCC)
PSRR
Input to GND, RL = 150 Ω ΔVCC :
100 mVp/F = 1 MHz, CLF = 470 nF, CHF = 100 µF
-70
dB
DC voltage gain
G
RL = 150Ω, Vin = 0.5V
-40°C < Tamb < +85°C
1.94 1.99 2.02 V/V
2
Variation of the DC voltage gain between inputs of
DG
0.3 V and 1 V
Input step from 0.3 V to 1 V
0.2 0.5
%
MG1
MG0.3
Gain matching between 3 channels, input = 1 V
Gain matching between 3 channels, input = 0.3 V
0.5
1
%
0.5
1
%
Output characteristics
High level output voltage
VOH
RL = 150 Ω
-40° C < Tamb < +85° C
Low level output voltage(1)
VOL
RL = 150 Ω
-40° C < Tamb < +85° C
Isource
Tamb
-40° C < Tamb < +85° C
Iout
Isink
-40° C < Tamb < +85° C
3.84 3.87
V
TBD
33
40
mV
TBD
91
46
mA
79
TBD 145
mA
102
3/14

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