TSHA5502(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TSHA5502 Datasheet PDF : 6 Pages
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TSHA5500, TSHA5501, TSHA5502, TSHA5503
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
IF = 1.5 A, tp = 100 µs
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
PART
TSHA5500
TSHA5501
TSHA5502
TSHA5203
TSHA5500
TSHA5501
TSHA5502
TSHA5503
TSHA5500
TSHA5501
TSHA5502
TSHA5503
TSHA5500
TSHA5501
TSHA5502
TSHA5503
SYMBOL
VF
VF
VF
VF
Ie
Ie
Ie
Ie
Ie
Ie
Ie
Ie
φe
φe
φe
φe
MIN.
12
16
20
24
150
200
250
300
TYP.
3.2
3.2
3.2
3.2
20
25
30
35
240
300
360
420
22
23
24
25
MAX.
4.9
4.9
4.5
4.5
60
60
60
60
UNIT
V
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
mW
101
IFSM = 2.5 A (Single Pause)
t p/T= 0.01
100 0.05
0.1
0.2
0.5
10-1
10-2
10-1
100
101
102
94 8003
t p - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
104
tp = 100 µs
t /T= 0.001
103
p
102
101
0
1
2
3
4
94 8005
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
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158
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81020
Rev. 1.5, 05-Sep-08
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