TSHA5500(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
TSHA5500 Datasheet PDF : 6 Pages
| |||
TSHA5500, TSHA5501, TSHA5502, TSHA5503
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120
RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Note
Tamb = 25 °C, unless otherwise specified
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
SYMBOL
VF
TKVF
IR
Cj
TKφe
ϕ
λp
Δλ
TKλp
tr
tr
tf
tf
d
MIN.
TYP.
1.5
- 1.6
20
- 0.7
± 24
875
80
0.2
600
300
600
300
2.2
MAX.
1.8
100
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Document Number: 81020
Rev. 1.5, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
157
Share Link: 