TSHA5502 데이터 시트보기 (PDF) - Vishay Semiconductors

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TSHA5502

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Vishay Semiconductors 

TSHA550.

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward Voltage

IF = 100 mA, tp = 20 ms

Temp. Coefficient of VF

IF = 100 mA

Reverse Current

VR = 5 V

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Optical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Temp. Coefficient of φe

IF = 20 mA

Angle of Half Intensity

Peak Wavelength

IF = 100 mA

Spectral Bandwidth

IF = 100 mA

Temp. Coefficient of λp

IF = 100 mA

Rise Time

IF = 100 mA

IF = 1.5 A

Fall Time

IF = 100 mA

IF = 1.5 A

Virtual Source Diameter

Type Dedicated Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward Voltage

IF = 1.5 A, tp = 100 µs

Radiant Intensity

IF = 100 mA, tp = 20 ms

IF = 1.5 A, tp = 100 µs

Radiant Power

IF = 100 mA, tp = 20 ms

VISHAY

Symbol

Min

VF

TKVF

IR

Cj

Typ.

1.5

- 1.6

20

Max

Unit

1.8

V

mV/K

100

µA

pF

Symbol

Min

TKφe

ϕ

λp

∆λ

TKλp

tr

tr

tf

tf

∅

Typ.

- 0.7

± 24

875

80

0.2

600

300

600

300

2.2

Max

Unit

%/K

deg

nm

nm

nm/K

ns

ns

ns

ns

mm

Part

Symbol Min

Typ.

Max

Unit

TSHA5500

VF

3.2

4.9

V

TSHA5501

VF

3.2

4.9

V

TSHA5502

VF

3.2

4.5

V

TSHA5503

VF

3.2

4.5

V

TSHA5500

Ie

12

20

60

mW/sr

TSHA5501

Ie

16

25

60

mW/sr

TSHA5502

Ie

20

30

60

mW/sr

TSHA5503

Ie

24

35

60

mW/sr

TSHA5500

Ie

150

240

mW/sr

TSHA5501

Ie

200

300

mW/sr

TSHA5502

Ie

250

360

mW/sr

TSHA5503

Ie

300

420

mW/sr

TSHA5500

φe

22

mW

TSHA5501

φe

23

mW

TSHA5502

φe

24

mW

TSHA5503

φe

25

mW

www.vishay.com

2

Document Number 81020

Rev. 1.3, 07-Apr-04

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