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TSL1018 데이터 시트보기 (PDF) - STMicroelectronics

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TSL1018
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TSL1018 Datasheet PDF : 15 Pages
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Electrical characteristics
3
Electrical characteristics
TSL1018
Table 3.
Symbol
Electrical characteristics for Tamb = 25°C , VDD = +5V, VSS = -5V, RL = 10kΩ, CL = 10pF
(unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
VIO
ΔVIO
IIB
RIN
CIN
VOL
VOH
IOUT
PSRR
ICC
SR
ts
BW
Gm
Cs
Input offset voltage
Input offset voltage drift
Input bias current
Input impedance
Input capacitance
Output voltage low
Output voltage high
Output current
Power supply rejection ratio
Supply current
Slew rate
(rising & falling edge)
Settling time
Bandwidth at -3dB
Phase margin
Channel separation
VICM = 0V
-40°C < Tamb < +85°C
VICM = 0V, buffers A & B
VICM = 0V, buffers C to R & COM
IOUT = -5mA
Buffers C to P
Buffers Q, R & COM
IOUT = 5mA for buffers A & B
(A to R buffers)
COM buffer
VCC= 6.5 to 15.5V
No load
-4V < VOUT < +4V
20% to 80%
Settling to 0.1%, VOUT=2V step
RL=10kΩ, CL=10pF
RL=10kΩ, CL=10pF
f=1MHz
12
5
140
70
1
1.35
mV
μV/°C
nA
GΩ
pF
-4.85 -4.80
V
-4.92 -4.85
4.82 4.87
V
±40
mA
±150
80 100
dB
8
11
mA
1.1
V/μs
5
μs
3.5
MHz
60
degrees
75
dB
Note:
Limits are 100% production tested at 25°C. Behavior at the temperature range limits is
guaranteed through correlation and by design.
4/15

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