TSM1N60CP 데이터 시트보기 (PDF) - TSC Corporation
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TSM1N60CP Datasheet PDF : 4 Pages
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TSM1N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
VDS = 600V
ID = 1A
RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω
General Description
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Block Diagram
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
IDSS and VDS(on) specified at elevated temperature
Ordering Information
Part No.
TSM1N60CP
TSM1N60CH
Packing
Tape & Reel
Tube
Package
TO-252
TO-251
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 oC
Ta > 25 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
EAS
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
TL
Rθja
TSM1N60
1-4
Limit
600V
± 30
1
9
50
0.4
+150
- 55 to +150
20
Unit
V
V
A
A
W
W/oC
oC
oC
mJ
Limit
10
62.5
Unit
S
oC/W
2003/12 rev. E
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