TSV914ID 데이터 시트보기 (PDF) - STMicroelectronics
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TSV914ID Datasheet PDF : 18 Pages
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Electrical characteristics
TSV911-TSV912-TSV914
Table 3. Electrical characteristics at VCC = +2.5V
VDD = 0V, Vicm = VCC/2, Tamb = 25°C, R L connected to Vcc/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
en
Equivalent input noise
voltage
THD+en Total harmonic distortion
1. Guaranteed by design.
f=10kHz
G=1, f=1kHz, Rl=2kΩ,
BW=22kHz,
Vicm=(Vcc+1)/2,
Vout=1.1Vpp
-
27
-
--n----V-----
Hz
- 0.001 -
%
Table 4. Electrical characteristics at VCC = +3.3V
VDD = 0V, Vicm = VCC/2, Tamb = 25°C, R L connected to Vcc/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
DC performance
Offset voltage
-
TSV91x
Vio
TSV91xA
Tmin. < Top < Tmax.
-
-
Tmin. < Top < Tmax.
-
DVio Input offset voltage drift
-
Iio Input offset current
-
Iib Input bias current
-
CMR
Common mode rejection
ratio 20 log (∆Vic/∆Vio)
0V to 3.3V, Vout = 1.65V
60
Avd Large signal voltage gain RL=10kΩ, Vout= 0.5V to 2.8V 80
Vcc-VOH High level output voltage
RL = 10kΩ
RL = 600Ω
VOL
Low level output voltage
RL = 10kΩ
RL = 600Ω
-
Isink
Iout
Isource
Vo = 3.3V
18
Tmin. < Tamb < Tmax.
16
Vo = 0V
18
Tmin. < Tamb < Tmax.
16
ICC
Supply current (per
operator)
No load, Vout=Vcc/2
Tmin. < Top < Tmax.
-
-
AC performance
GBP Gain bandwidth product
RL = 2kΩ, CL = 100pF,
f = 100kHz
-
Fu Unity gain frequency
RL = 2kΩ, CL=100pF
-
0.1 4.5
- 7.5
mV
- 1.5
-
3
2
- µV/°C
1 10(1) pA
1 10(1) pA
78 -
dB
90 -
dB
15 40
45 150
mV
15 40
45 150
mV
32 -
-
-
mA
35 -
-
-
0.8 1.1
mA
- 1.1
8
-
7.2 -
MHz
MHz
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