TSV914ID 데이터 시트보기 (PDF) - STMicroelectronics
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TSV914ID Datasheet PDF : 18 Pages
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TSV911-TSV912-TSV914
Electrical characteristics
Table 4. Electrical characteristics at VCC = +3.3V
VDD = 0V, Vicm = VCC/2, Tamb = 25°C, R L connected to Vcc/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
φm Phase margin
Gm Gain margin
SR Slew rate
RL = 2kΩ, CL = 100pF,
f = 100kHz
RL = 2kΩ, CL = 100pF,
f = 100kHz
RL = 2kΩ, CL = 100pF,
f = 100kHz, Av=1
- 45 - Degrees
-
8
-
dB
- 4.5 -
V/µs
en
Equivalent input noise
voltage
f=10kHz
- 27 -
--n----V-----
Hz
THD+en Total harmonic distortion
G=1, f=1kHz, Rl=2kΩ,
BW=22kHz, Vicm=(Vcc+1)/2,
Vout=1.9Vpp
-
0.00
07
-
%
1. Guaranteed by design.
Table 5. Electrical characteristics at VCC = +5V
VDD = 0V, Vicm = VCC/2, Tamb = 25°C, R L connected to Vcc/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
DC performance
Offset voltage
TSV91x
Vio
TSV91xA
-
Tmin. < Top < Tmax.
-
-
Tmin. < Top < Tmax.
-
DVio Input offset voltage drift
-
Iio Input offset current
-
Iib Input bias current
-
Common mode rejection ratio
CMR
20 log (∆Vic/∆Vio)
0V to 5V, Vout = 2.5V
62
SVR
Supply voltage rejection ratio
20 log (∆Vcc/∆Vio)
Vcc = 2.5 to 5V
70
Avd Large signal voltage gain
RL=10kΩ, Vout= 0.5V to
4.5V
80
Vcc-
VOH
High level output voltage
RL = 10kΩ
RL = 600Ω
VOL Low level output voltage
RL = 10kΩ
RL = 600Ω
-
Isink
Iout
Isource
Vo = 5V
18
Tmin. < Tamb < Tmax.
16
Vo = 0V
18
Tmin. < Tamb < Tmax.
16
0.1 4.5
-
7.5
mV
-
1.5
-
3
2
- µV/°C
1
10(1)
pA
1
10(1)
pA
82
-
dB
86
-
dB
91
-
dB
15 40
45 150
mV
15 40
45 150
mV
32
-
-
-
mA
35
-
-
-
7/18
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