UMB10NTN 데이터 시트보기 (PDF) - ROHM Semiconductor

부품명

상세내역

제조사

UMB10NTN

General purpose (dual digital transistor)

ROHM Semiconductor 

EMB10 / UMB10N / IMB10A

lAbsolute maximum ratings (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Supply voltage

Input voltage

Output current

Collector current

EMB10

Power dissipation

UMB10N

IMB10A

Junction temperature

Range of storage temperature

Datasheet

Symbol

Values

Unit

VCC

-50

V

VIN

-12 to 5

V

IO

-100

mA

IC(MAX)*1

-100

mA

PD*2*3

150

PD*2*3

150

mW

PD*2*4

300

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Symbol

Conditions

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

VCC = -5V, IO = -100μA

VO = -0.3V, IO = -5mA

IO = -5mA, II = -0.25mA

VI = -5V

VCC = -50V, VI = 0V

VO = -5V, IO = -10mA

-

-

Transition frequency

f

*1

T

VCE = -10V, IE = 5mA,

f = 100MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Values

Unit

Min. Typ. Max.

-

- -0.5

V

-1.1 -

-

- -100 -300 mV

-

- -3.6 mA

-

- -500 nA

80

-

-

-

1.54 2.2 2.86 kΩ

17 21 26

-

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

www.rohm.com

© 2015 ROHM Co., Ltd. All rights reserved.

2/7

　 　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

20150919 - Rev.002

Share Link: