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UPC8110GR 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPC8110GR Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
µPC8110GR
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 3.0 V, Unless Otherwise Specified VPS 2.2 V (High))
PARAMETER
Circuit Current
Circuit Current at Power Save Mode
Maximum Output Power
LO Carrier Leak
Image Rejection (Side Band Leak)
I/Q 3rd Order Intermodulation
Distortion
Power Save Rise Time
Power Save Fall Time
SYMBOL
ICC
ICC(PS)
Po(sat)
LoL
ImR
IM3I/Q
TPS(RISE)
TPS(FALL)
MIN.
20
13
TYP.
24
10
35
40
45
3
2
MAX.
33
10
30
30
30
5
5
UNIT
mA
uA
dBM
dBc
dBc
dBc
TEST CONDITIONS
No input signal
VPS 0.5 V (Low)
fLOin = 948 MHz
PLOin = 10 dBm
fI/Q = 2.625 kHz
I/Q (DC) = VCC/2
VI/Qin = 500 mVp-p
(Single ended)
µs
VPS: Low High
µs
VPS: High Low
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25 °C, VCC = 3.0 V, Unless Otherwise Specified VPS 2.2 V (Hgih))
PARAMETER
I/Q Input Impeadance
LO Input VSWR
RF Output VSWR
SYMBOL
ZI/Qin
VSWR (Lo)
VSWR
(RF)
MIN.
TYP.
150
1.5 : 1
1.5 : 1
MAX.
UNIT
k
TEST CONDITIONS
fI/Q = DC to 10 MHz
fLO = 948 MHz
fLO = 948 MHz
4
Data Sheet P11074EJ3V0DS00

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