µPC8110GR
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 3.0 V, Unless Otherwise Specified VPS ≥ 2.2 V (High))
PARAMETER
Circuit Current
Circuit Current at Power Save Mode
Maximum Output Power
LO Carrier Leak
Image Rejection (Side Band Leak)
I/Q 3rd Order Intermodulation
Distortion
Power Save Rise Time
Power Save Fall Time
SYMBOL
ICC
ICC(PS)
Po(sat)
LoL
ImR
IM3I/Q
TPS(RISE)
TPS(FALL)
MIN.
20
−13
TYP.
24
−10
−35
−40
−45
3
2
MAX.
33
10
−30
−30
−30
5
5
UNIT
mA
uA
dBM
dBc
dBc
dBc
TEST CONDITIONS
No input signal
VPS ≤ 0.5 V (Low)
fLOin = 948 MHz
PLOin = −10 dBm
fI/Q = 2.625 kHz
I/Q (DC) = VCC/2
VI/Qin = 500 mVp-p
(Single ended)
µs
VPS: Low → High
µs
VPS: High → Low
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25 °C, VCC = 3.0 V, Unless Otherwise Specified VPS ≥ 2.2 V (Hgih))
PARAMETER
I/Q Input Impeadance
LO Input VSWR
RF Output VSWR
SYMBOL
ZI/Qin
VSWR (Lo)
VSWR
(RF)
MIN.
TYP.
150
1.5 : 1
1.5 : 1
MAX.
UNIT
kΩ
−
−
TEST CONDITIONS
fI/Q = DC to 10 MHz
fLO = 948 MHz
fLO = 948 MHz
4
Data Sheet P11074EJ3V0DS00