UT2301
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-2.8
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation
PD
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL MIN
θJA
TYP
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
MAX
110
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250uA
-20
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250uA
-0.45
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=-6V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=-6V, VGS=-4.5V,
ID=-1A, RG=6Ω, RL=6Ω
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=-6V, VGS=-4.5V,
ID=-2.8A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD VGS=0V, IS=-1.6A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
TYP
95
122
447
127
80
5
19
95
65
5.4
0.8
1.1
-0.8
MAX UNITS
V
-1 µA
±100 nA
V
130 mΩ
190 mΩ
pF
pF
pF
25 ns
60 ns
110 ns
80 ns
10 nC
nC
nC
-1.2 V
-1.6 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-118.G