UT12N10L-TM3-T 데이터 시트보기 (PDF) - Unisonic Technologies
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UT12N10L-TM3-T Datasheet PDF : 3 Pages
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UT12N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100
V
±20
V
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
12
A
44
A
Power Dissipation
SOT-223
TO-251/TO-252
PD
9
36
W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
SOT-223
TO-251/TO-252
θJA
150
50
°C/W
Junction to Case
SOT-223
TO-251/TO-252
θJC
14
3.5
°C/W
Note: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board design.
2. When mounted on a 1 in2 pad of 2 oz copper.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=6A
VDS=10V, ID=6A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
VDD=30V, ID=0.5A, VGS=10V,
RG=25Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=12A, VGS=0V
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing.
MIN TYP MAX UNIT
100
V
1 µA
+100 nA
-100 nA
1
3V
150 180 mΩ
5
S
430 500 pF
90
pF
20
pF
8 16 nC
1.5
nC
2
nC
12 24 ns
174 185 ns
132 145 ns
188 210 ns
12 A
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-508.f
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