UTC2SB772NL 데이터 시트보기 (PDF) - Unisonic Technologies
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UTC2SB772NL Datasheet PDF : 2 Pages
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UTC2SB772NL PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
1.6
1.2
0.8
0.4
0
0
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
4
8
12
16
20
-Collector-Emitter voltage(V)
Fig.2 Derating curve of safe
operating areas
150
100
S/b limited
50
0
-50
0
50
100
150
200
Tc,Case Temperature(°C)
Fig.3 Power Derating
12
8
4
0
-50
0
50
100
150
200
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
3
10
IE=0
f=1MHz
102
101
Fig.5 Current gain-
bandwidth product
3
10
VCE=5V
102
IB=8mA
101
Fig.6 Safe operating area
1 Ic(max),Pulse
10
Ic(max),DC 10mS
1mS
0.1mS
10 0
10-1
100
10 0
10-1
10-2
10-3
-Collector-Base Voltage(v)
100
10-2
10-1
10 0
101
Ic,Collector current(A)
10-2
10 0
101
102
Collector-Emitter Voltage
Fig.7 DC current gain
103
VCE=-2V
102
101
100
100
101
102
103
104
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
104
103
VBE(sat)
102
VCE(sat)
101
100
100
101
102
103
104
-Ic,Collector current(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R211-001,A
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