VN800PT-E 데이터 시트보기 (PDF) - STMicroelectronics

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VN800PT-E

HIGH SIDE DRIVER

STMicroelectronics 

VN800S-E / VN800PT-E

ELECTRICAL CHARACTERISTICS (continued)

Table 8. VCC - Output Diode

Symbol

Parameter

VF

Forward on Voltage

Test Conditions

-IOUT=0.6A; Tj=150°C

Min.

Typ.

Max. Unit

0.6

V

Table 9. Status Pin

Symbol

VSTAT

ILSTAT

CSTAT

Parameter

Test Conditions

Status Low Output Voltage ISTAT=1.6 mA

Status Leakage Current Normal Operation; VSTAT=VCC=36 V

Status Pin Input

Capacitance

Normal Operation; VSTAT= 5V

Min

Typ

Max Unit

0.5

V

10

µA

30

pF

Table 10. Protections (see note 1)

Symbol

TTSD

TR

Thyst

TSDL

Ilim

Vdemag

Parameter

Shut-down Temperature

Reset Temperature

Thermal Hysteresis

Status Delay in Overload

Condition

DC Short Circuit Current

Turn-off Output Clamp

Voltage

Test Conditions

Tj>Tjsh

VCC=24V; RLOAD=10mΩ

IOUT=0.5 A; L=6mH

Min

Typ

Max Unit

150

175

200

°C

135

°C

7

15

°C

20

µs

0.7

2

A

VCC-47 VCC-52 VCC-57 V

Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be

used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration

and number of activation cycles.

Figure 5.

OVERTEMP STATUS TIMING

VIN

Tj>Tjsh

VSTAT

tSDL

tSDL

5/24

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