VN800S-E 데이터 시트보기 (PDF) - STMicroelectronics

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VN800S-E

HIGH SIDE DRIVER

STMicroelectronics 

VN800S-E / VN800PT-E

Table 12. Electrical Transient Requirements On VCC Pin

ISO T/R 7637/1

Test Pulse

I

TEST LEVELS

II

III

1

-25 V

-50 V

-75 V

2

+25 V

+50 V

+75 V

3a

-25 V

-50 V

-100 V

3b

+25 V

+50 V

+75 V

4

-4 V

-5 V

-6 V

5

+26.5 V

+46.5 V

+66.5 V

IV

-100 V

+100 V

-150 V

+100 V

-7 V

+86.5 V

Delays and

Impedance

2 ms 10 Ω

0.2 ms 10 Ω

0.1 µs 50 Ω

0.1 µs 50 Ω

100 ms, 0.01 Ω

400 ms, 2 Ω

ISO T/R 7637/1

Test Pulse

I

1

C

2

C

3a

C

3b

C

4

C

5

C

TEST LEVELS RESULTS

II

III

IV

C

C

C

C

C

C

C

C

C

C

C

C

C

C

C

E

E

E

CLASS

C

E

CONTENTS

All functions of the device are performed as designed after exposure to disturbance.

One or more functions of the device is not performed as designed after exposure to disturbance

and cannot be returned to proper operation without replacing the device.

Figure 7. Peak Short Circuit Current Test Circuit

CONTROL

UNIT

GND

10kΩ

STATUS

VCC

INPUT

RIN

+VCC

OUTPUT

RL=10mΩ

GND

7/24

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