VN1509NW 데이터 시트보기 (PDF) - Supertex Inc
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VN1509NW Datasheet PDF : 2 Pages
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VN1504/ VN1506/ VN1509
N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BVDSS /
BVDGS
40V
60V
90V
RDS(ON)
(max)
3.0Ω
3.0Ω
3.0Ω
ID(ON)
(min)
2.0A
2.0A
2.0A
Order Number / Package
Die†
VN1504NW
VN1506NW
VN1509NW
† MIL visual screening available.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Advanced DMOS Technology
Thisi enhancement-mode (normally-off) transistori utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
1
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