Electrical Characteristics (@25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
VN1504
40
BVDSS
Drain-to-Source
VN1506
60
V
Breakdown Voltage
VN1509
90
VGS(th)
∆VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
2.4
V
-3.8 -5.5 mV/°C
100
nA
1
100
µA
ID(ON)
ON-State Drain Current
0.5 1.0
2.0 2.5
RDS(ON)
Static Drain-to-Source
ON-State Resistance
3.0 5.0
2.5 3.0
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.70
1
300 450
55
65
20
25
5
8
3
5
5
8
6
9
5
8
1.2 1.8
400
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
m
pF
ns
V
ns
VN1509
Conditions
VGS = 0V, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 250mA
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A
VDS = 25V, ID = 0.5A
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V
ID = 1A
RGEN = 25Ω
VGS = 0V, ISD =1.0A
VGS = 0V, ISD =1.0A
Switching Waveforms and Test Circuit
Doc.# DSFP - VN0109
A062306
2