VNP14NV04(2003) 데이터 시트보기 (PDF) - STMicroelectronics
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VNP14NV04 Datasheet PDF : 29 Pages
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VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDD=13V; ID=7A
VDS=13V; f=1MHz; VIN=0V
Min Typ
18
400
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Qi
Total Input Charge
Test Conditions
Min
VDD=15V; ID=7A
Vgen=5V; Rgen=RIN MIN=10Ω
(see figure 1)
VDD=15V; ID=7A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=7A
Vgen=5V; Rgen=RIN MIN=10Ω
VDD=12V; ID =7A; VIN=5V; Igen=2.13mA
(see figure 5)
Typ
80
350
450
150
1.5
9.7
9
10.2
16
36.8
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD =7A; VIN=0V
ISD=7A; di/dt=40A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
Min Typ
0.8
300
0.8
5
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=5V; VDS=13V
VIN=5V; VDS=13V
Min Typ
12
18
45
Overtemperature
Tjsh
Shutdown
150 175
Tjrs
Overtemperature Reset
135
Igf
Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10
15
Single Pulse
Eas
Avalanche Energy
starting Tj=25°C; VDD =24V
VIN= 5V; Rgen=RIN MIN=10Ω; L=24mH 400
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Max
Max
250
1000
1350
500
4.5
30.0
25.0
30.0
Max
Max
24
200
20
Unit
S
pF
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
nC
Unit
V
ns
µC
A
Unit
A
µs
°C
°C
mA
mJ
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