Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSS
Drain-to-Source
Breakdown Voltage
-500
V
VGS(th)
∆VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-2.0
-4.5
V
3.5
6 mV/°C
-100
nA
-10
-1000
µA
ID(ON)
ON-State Drain Current
-100
-90
-240
RDS(ON)
Static Drain-to-Source
ON-State Resistance
85
80 125
∆RDS(ON) Change in RDS(ON) with Temperature
0.85
GFS
Forward Transconductance
25
40
CISS
Input Capacitance
40
70
COSS
Common Source Output Capacitance
10
20
CRSS
Reverse Transfer Capacitance
3
10
td(ON)
Turn-ON Delay Time
5
10
tr
Rise Time
8
10
td(OFF)
Turn-OFF Delay Time
8
15
tf
Fall Time
5
16
VSD
Diode Forward Voltage Drop
-0.8 -1.5
trr
Reverse Recovery Time
200
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
%/°C
m
pF
ns
V
ns
VP1550
Conditions
VGS = 0V, ID = -1mA
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -5V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5V, ID = -5mA
VGS = -10V, ID = -10mA
VGS = -10V, ID = -10mA
VDS = -25V, ID = -10mA
VGS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ID = -100mA
RGEN = 25Ω
VGS = 0V, ISD = -0.1A
VGS = 0V, ISD = -0.1A
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com