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VSC7991X 데이터 시트보기 (PDF) - Vitesse Semiconductor

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VSC7991X Datasheet PDF : 10 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Absolute Maximum Ratings(1)
Negative Power Supply Voltage (VSS).............................................................................................. VCC to 8.0V
All Pins ................................................................................................................................................VSS to + .5V
Supply Voltage (VSS) ......................................................................................................................................... 8V
Supply Current (ISS) .................................................................................................................................... 500mA
Input Voltage (VIN)........................................................................................................................................ −2.0V
Output Voltage (VOUT)................................................................................................................................. 4.0V
Modulation Control Voltage (VIP).........................................................................................................VSS 0.5V
Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V
Output Offset Control Current (IIB) .............................................................................................................. 50mA
Maximum Junction Temperature Range ..................................................................................... −55°C to +125°C
Storage Temperature Range: ....................................................................................................... −55°C to +125°C
Note:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND) .............................................................................................................................. 0V
Negative Voltage Rail (VSS)........................................................................................................... −6.5V to 7.2V
Operational Case Temperature (TC1) ...................................................................................................0°C to 75°C
G52321-0, Rev 2.3
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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