RVT1200 데이터 시트보기 (PDF) - Electronic devices inc.

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RVT1200

HIGH VOLTAGE 50 mA SILICON RECTIFIERS

Electronic devices inc. 

HIGH VOLTAGE 50 mA

SILICON RECTIFIERS

VT RVT

SMALL SIZE MOLDED PACKAGE

PRV 10,000 TO 15,000 VOLTS

FAST RECOVERY (R_SERIES)

AVALANCHE CHARACTERISTICS

LOW LEAKAGE

EDI

Type

PRV

Volts

REVERSE RECOVERY TIME

(Fig.4)

VT1000

VT1200

VT1500

RVT1000

RVT1200

RVT1500

10,000

12,000

15,000

10,000

12,000

15,000

-

-

-

100 ns max.

100 ns max.

100 ns max.

ELECTRICAL CHARACTERISTICS (at TA=25 oC Unless Otherwise Specified)

Average Rectified Forward Current @ 50oC, IO

Max. Peak Surge Current, IFSM (8.3ms)

Max. Forward Voltage Drop @ 50 mA, VF

Max. DC Reverse Current @ PRV and 25oC, IR

Max. DC Reverse Current @ PRV and100oC, IR

Ambient Operating Temperature Range, TA

Storage Temperature Range, TSTG

50 mA

5 Amp

28Volts

1A

25 A

-55 to + 125oC

-55 to + 150oC

NOTES:

1.It is recommended that a proper heat sink be used on the terminals of this device between the body and

soldering point to prevent damage from excess heat.

2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.

EDI reservesthe rightto changethese specificationsat any time withoutnotice.

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