25Q32VFIG 데이터 시트보기 (PDF) - Winbond

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25Q32VFIG

32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

Winbond 

W25Q32V

10.2.18 32KB Block Erase (52h)

The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all

1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase

Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low

and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block

Erase instruction sequence is shown in figure 18.

The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done

the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase

instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase

cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of

the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is

finished and the device is ready to accept other instructions again. After the Block Erase cycle has

finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase

instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2,

BP1, and BP0) bits (see Status Register Memory Protection table).

Figure 18. 32KB Block Erase Instruction Sequence Diagram

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Publication Release Date: August 19, 2009

Preliminary - Revision E

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