L9925 데이터 시트보기 (PDF) - STMicroelectronics
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L9925 Datasheet PDF : 9 Pages
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L9925
In this condition the dissipated power is ginen by:
PON = RDS(ON) ⋅ IDS2
The low RDS(ON) of the Multipower BCD process
can provide high currents with low power dissipa-
tion.
OFF STATE
When one of the POWER DMOS transistor is
OFF the VDS voltage is equal to the supply volt-
age and only the leakage current IDSS flows.
The power dissipation during this period is given
by:
POFF = VS ⋅ IDSS
Figure 5a. Two phase chopping
TRANSITIONS
Like all MOS power transistors the DMOS
POWER transistors have an intrinsic diode be-
tween their source and drain that can operate as
a fast freewheeling diode in switched mode appli-
cations. During recirculation with the ENABLE in-
put is low, the POWER MOS is OFF and the di-
ode voltage it is clamped to its characteristics.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culation current. The power dissipated in the tran-
sitional times in the cycle depends upon the volt-
age and current waveforms in the application.
Ptrans = IDS(t) ⋅ VDS(t)
EN
IN1
IN1 = H
IN2 = L
EN1 = H
Figure 5b. One phase chopping
EN
IN2
D99AT429
IN1
IN1 = L
IN2 = H
EN1 = H
IN2
D99AT430
EN
IN1
IN1 = H
IN2 = L
EN1 = H
Figure 5c. Enable chopping
EN
IN1
IN1 = H
IN2 = L
EN1 = H
6/9
EN
IN2
D99AT431
IN1
IN1 = H
IN2 = H
EN1 = H
EN
IN2
D99AT433
IN1
IN1 = X
IN2 = X
EN1 = L
IN2
D99AT432
IN2
D99AT434
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