ZXMN2A02X8 데이터 시트보기 (PDF) - Zetex => Diodes

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ZXMN2A02X8

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN2A02X8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS 20

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

27

DYNAMIC (3)

1

100

0.02

0.04

V

ID=250µA, VGS=0V

µA VDS=20V, VGS=0V

nA

VGS=Ϯ12V, VDS=0V

V

I =250µA,

D

VDS=

VGS

Ω

VGS=4.5V, ID=11A

Ω

VGS=2.5V, ID=8.4A

S

VDS=10V,ID=11A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

2050

300

183

pF

VDS=15 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

6.9

12.2

32.5

11

18.6

4.1

5.1

ns

ns VDD =10V, ID=5.5A

ns

RG=6.0Ω, VGS=5V

ns

nC

VDS=10V,VGS=4.5V,

nC ID=5.5A

nC

Diode Forward Voltage (1)

VSD

0.8

0.95

Reverse Recovery Time (3)

trr

19.3

Reverse Recovery Charge (3)

Qrr

9.1

NOTES

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

TJ=25°C, IS=11A,

VGS=0V

ns TJ=25°C, IF=5.5A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE A - SEPTEMBER 2001

3

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