ZXT10P12DE6(2000) 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZXT10P12DE6
(Rev.:2000)

SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ZXT10P12DE6

SuperSOT™

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

VCEO=-12V; RSAT = 65m ; IC= -3A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

FEATURES

• Low Equivalent On Resistance

• Extremely Low Saturation Voltage

• hFE characterised up to 10A

• IC=3A Continuous Collector Current

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH

(mm)

ZXT10P12DE6TA

7

8mm embossed

ZXT10P12DE6TC

13

8mm embossed

QUANTITY

PER REEL

3000 units

10000 units

DEVICE MARKING

717

SOT23-6

C

C

C

C

B

E

Top View

ISSUE 1 - SEPTEMBER 2000

1

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