ZXT10P12DE6(2000) 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZXT10P12DE6
(Rev.:2000)

SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ZXT10P12DE6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO -12

-35

V

IC=-100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO -12

-25

V

IC=-10mA*

Emitter-Base Breakdown Voltage V(BR)EBO -5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

300

Ratio

300

180

60

45

Transition Frequency

fT

80

-8.5

-100

-100

-100

-10

-100

-100

-195

-17

-140

-150

-300

-0.90 -0.95

-0.85 -0.90

475

450

275

100

70

110

V

nA

nA

nA

mV

mV

mV

mV

V

V

MHz

IE=-100␮A

VCB=-10V

VEB=-4V

VCES=-10V

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-10mA*

IC=-1.5A, IB=-50mA*

IC=-3A, IB=-50mA*

IC=-3A, IB=-50mA*

IC=-3A, VCE=-2V*

IC=-10mA, VCE=-2V*

IC=-0.1A, VCE=-2V*

IC=-2.5A, VCE=-2V*

IC=-8A, VCE=-2V*

IC=-10A, VCE=-2V*

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

21

30

pF

VCB=-10V, f=1MHz

Turn-On Time

Turn-Off Time

t(on)

t(off)

70

ns

VCC=-6V, IC=-2A

IB1=IB2=-50mA

130

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 1 - SEPTEMBER 2000

4

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