K3157 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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K3157 Datasheet PDF : 9 Pages
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2SK3157
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
I D = 20 A
0.8
10 A
0.4
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
VGS = 4 V
50
10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
5, 10 A
I D = 20 A
100
V GS = 4 V
50
5, 10 A
20 A
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
75 °C
3
25 °C
1
0.3
0.1
0.1 0.2
V DS = 10 V
Pulse Test
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
4
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