K3157 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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K3157 Datasheet PDF : 9 Pages
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2SK3157
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300
Coss
100
Crss
30 VGS = 0
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
I D = 20A
160 VDD = 100 V
50 V
25 V
120
VGS
16
12
VDS
80
8
40
VDD = 100 V
4
50 V
25 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
5000
2000
1000
500
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
t d(off)
200
tf
100
tr
50
20
t d(on)
10
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I D (A)
5
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