CXG1027TM 데이터 시트보기 (PDF) - Sony Semiconductor
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CXG1027TM Datasheet PDF : 6 Pages
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CXG1027TM
Electrical Characteristics
VGG=0.2 V, VDD=3.4 V, f=941.5 MHz
Item
∗1 Current consumption
Output power
∗1 Power gain
∗2 Adjacent channel leak power ratio
(30 kHz offset)
∗2 Adjacent channel leak power ratio
(50 kHz offset)
Symbol
IDD
POUT
GP
ACPR30
ACPR50
Min.
10
27
Typ.
45
29.5
–50
–69
Max.
65
32
–47
(Ta=25 °C)
Unit
mA
dBm
dB
dBc
–65
dBc
VGG=0.2 V, VDD=3.4 V, f=1.441 GHz
Item
∗1 Current consumption
Output power
∗1 Power gain
∗2 Adjacent channel leak power ratio
(30 kHz offset)
∗2 Adjacent channel leak power ratio
(50 kHz offset)
Symbol
IDD
POUT
GP
ACPR30
ACPR50
Min.
10
25
Typ.
45
27.5
–50
–69
∗1 : When +10 dBm output
∗2 : When +10 dBm output, 21 kHz band width
Max.
65
30
–47
(Ta=25 °C)
Unit
mA
dBm
dB
dBc
–65
dBc
Block Diagram
RFOUT/VDD2
VDD1
RFIN
VGG
Package Description/Pin Configuration
1
GND
10
GND
GND (CAP)
GND (CAP)
RFOUT/VDD2
RFIN
VDD1
GND
10pin TSSOP (PLASTIC)
VGG
GND (1.5GHz) or
GND (IND) (800MHz)
—2—
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