MMBTA06LT3 데이터 시트보기 (PDF) - ON Semiconductor
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MMBTA06LT3 Datasheet PDF : 6 Pages
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1 is a Preferred Device
Driver Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MMBTA05LT1
60
MMBTA06LT1
80
Collector −Base Voltage
VCBO
Vdc
MMBTA05LT1
60
MMBTA06LT1
80
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
4.0
Vdc
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
1H M G
G
MMBTA05LT1
1GM M G
G
MMBTA06LT1
1H, 1GM = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 3
Publication Order Number:
MMBTA05LT1/D
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