SISA12ADN-T1-GE3 데이터 시트보기 (PDF) - Unspecified
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SISA12ADN-T1-GE3 Datasheet PDF : 13 Pages
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SiSA12ADN
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss/Ciss Ratio
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = + 20, - 16 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
VDS = 10 V, ID = 10 A
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Output Charge
Qoss
Gate Resistance
Turn-On Delay Time
Rg
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
Rise Time
td(on)
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
TC = 25 °C
IS = 10 A
IF = 10 A, dI/dt = 100 A/µs,
TJ = 25 °C
Min.
Typ.
Max.
Unit
30
V
16
mV/°C
-5
1.1
2.2
V
± 100
nA
1
µA
10
25
A
0.0032 0.0043
0.0044 0.0060
51
S
2070
600
pF
51
0.025 0.050
29.5
45
13.6
21
5.2
nC
2.6
16
0.3
1.7
3.4
10
20
10
20
25
50
10
20
ns
20
40
15
30
22
45
10
20
25
A
80
0.86
1.2
V
27
55
ns
15
30
nC
13
ns
14
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63234
2
S13-0113-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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