P6SMB100AT3G(2012) 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

P6SMB100AT3G
(Rev.:2012)

600 Watt Peak Power Zener Transient Voltage Suppressors

ON Semiconductor 

P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction−to−Lead

PD

RqJL

3.0

W

40

mW/C

25

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance from Junction−to−Ambient

PD

RqJA

0.55

W

4.4

mW/C

226

C/W

Forward Surge Current (Note 4) @ TA = 25C

IFSM

100

A

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive

2. 1 square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted, VF = 3.5 V Max. @

IF (Note 4) = 30 A) (Note 5)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

QVBR Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive

duty cycle

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

http://onsemi.com

2

Share Link: