NGTG15N60S1EG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction to case, for IGBT
Thermal resistance junction to ambient
Symbol
RqJC
RqJA
Value
1.06
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
Forward Transconductance
DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 V
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Total switching loss
*Includes diode reverse recovery loss using NGTB15N60S1EG.
Symbol Min Typ Max Unit
V(BR)CES 600
−
−
V
VCEsat 1.3
1.5
1.7
V
1.55 1.75 1.95
VGE(th) 4.5
5.5
6.5
V
ICES
−
10
−
mA
−
−
200
IGES
−
−
100
nA
gfs
− 10.1 −
S
Cies
− 1950 −
Coes
−
70
−
pF
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
nC
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
ns
td(off)
−
170
−
tf
−
140
−
Eon
− 0.550 −
Eoff
− 0.350 −
mJ
Ets
− 0.900 −
td(on)
−
65
−
tr
−
28
−
ns
td(off)
−
180
−
tf
−
260
−
Eon
− 0.650 −
Eoff
− 0.600 −
mJ
Ets
− 1.250 −
http://onsemi.com
2