NGTG15N60S1EG
TYPICAL CHARACTERISTICS
20
15
VCES = 480 V
10
5
0
0 10 20 30 40 50 60 70 80 90 100
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
1000
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
1 RG = 22 W
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
1000
tf
100
td(off)
td(on)
tr
10 VCE = 400 V
VGE = 15 V
TJ = 150°C
RG = 22 W
1
8
12
16
20
24
28
32
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. IC
0.7
0.6
Eon
0.5
Eoff
0.4
0.3
0.2
VCE = 400 V
VGE = 15 V
0.1
IC = 15 A
RG = 22 W
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Switching Loss vs. Temperature
1.4
VCE = 400 V
1.2 VGE = 15 V
Eon
TJ = 150°C
1.0 RG = 22 W
0.8
Eoff
0.6
0.4
0.2
0
8
12
16
20
24
28
32
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
1.2
Eon
VCE = 400 V
VGE = 15 V
0.9 IC = 15 A
TJ = 150°C
Eoff
0.6
0.3
0
5 15 25 35 45 55 65 75 85
RG, GATE RESISTOR (W)
Figure 12. Switching Time vs. RG
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