NGTB15N60S1EG 데이터 시트보기 (PDF) - Unspecified

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NGTB15N60S1EG

IGBT - Short-Circuit Rated

Unspecified 

NGTB15N60S1EG

TYPICAL CHARACTERISTICS

1.2

VCE = 400 V

VGE = 15 V

0.9 IC = 15 A

TJ = 150°C

0.6

1000

Eon

tf

td(off)

100

td(on)

Eoff

tr

0.3

0

5 15 25 35 45 55 65 75 85

Rg, GATE RESISTOR (W)

Figure 13. Switching Time vs. Rg

10

VCE = 400 V

VGE = 15 V

IC = 15 A

TJ = 150°C

1

5 15 25 35 45 55 65 75 85

Rg, GATE RESISTOR (W)

Figure 14. Switching Time vs. Rg

1.2

VGE = 15 V

IC = 15 A

0.9 Rg = 22 W

TJ = 150°C

0.6

Eon

Eoff

0.3

0 175 225 275 325 375 425 475 525 575

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 15. Switching Loss vs. VCE

1000

tf

100

td_off

td_on

tr

10

VGE = 15 V

IC = 15 A

Rg = 22 W

TJ = 150°C

1

175 225 275 325 375 425 475 525 575

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 16. Switching Time vs. VCE

1000

100

1 ms 100 ms

10

dc operation

50 ms

1

Single Nonrepetitive

Pulse TC = 25°C

0.1 Curves must be derated

linearly with increase

in temperature

0.01

1

10

100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 17. Safe Operating Area

1000

1000

100

10

1

0.1

0.01 VGE = 15 V, TC = 125°C

1

10

100

1000

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 18. Reverse Bias Safe Operating Area

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