NGTB15N60S1EG 데이터 시트보기 (PDF) - Unspecified
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NGTB15N60S1EG Datasheet PDF : 10 Pages
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NGTB15N60S1EG
TYPICAL CHARACTERISTICS
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
Junction R1 R2
Ci = ti/Ri
C1 C2
RqJC = 1.06
Ri (°C/W) ti (sec)
0.1
7.1E−5
Rn Case 0.05010 1.0E−4
0.15051 0.002
0.33992 0.003
0.10550 0.00999
0.20020 0.03
Cn
0.11423
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
50% Duty Cycle
1 20%
10%
5%
2%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
RqJC = 3.76
Ri (°C/W) ti (sec)
0.01895 1.0E−7
Duty Factor = t1/t2
0.04097 1.0E−6
1%
Peak TJ = PDM x ZqJC + TC
0.12956 1.0E−5
0.1
7.1E−5
Junction R1 R2
Rn
0.20199 1.0E−4
Case 1.62730 0.002
Ci = ti/Ri
0.57301 0.003
0.45453 0.00498
0.40199 0.03
C1 C2
Cn
0.21558
0.1
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
100
1000
Figure 21. Test Circuit for Switching Characteristics
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