FDS4935A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4935A Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -8.8A
8
6
4
2
0
0
4
VDS = -5V
-15V
-10V
8
12
16
20
24
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
f = 1 MHz
VGS = 0 V
CISS
COSS
CRSS
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935A Rev A(W)
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