1N6482-E3/96(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N6482-E3/96 Datasheet PDF : 4 Pages
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1N6478 thru 1N6484
Vishay General Semiconductor
10
100
Pulse Width = 300 µs
1
1 % Duty Cycle
10
TJ = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TJ = 100 °C
1
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.1
0.01
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Solderable Ends
1st Band
DO-213AB
D2
=
D1
+
-
0
0.008
(0.20)
Mounting Pad Layout
0.138 (3.5) MAX.
D2
D1
=
0.105
0.095
(2.67)
(2.41)
0.118 (3.0) MIN.
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
1st band denotes type and positive end (cathode)
0.049 (1.25) MIN.
0.238 (6.0) REF.
Document Number: 88527 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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