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29F128G08CEAAA 데이터 시트보기 (PDF) - Micron Technology

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29F128G08CEAAA
Micron
Micron Technology Micron
29F128G08CEAAA Datasheet PDF : 159 Pages
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Micron Confidential and Proprietary
Advance
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 64G 08 C B A A A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
64G = 64Gb
128G = 128Gb
256G = 256Gb
512G = 512Gb
Device Width
08 = 8 bits
Level
Bit/Cell
C 2-bit
Classification
Die # of CE# # of R/B# I/O
B
1
1
1
Common
E
2
2
2
Separate
F
2
2
2
Common
J
4
2
2
Common
K
4
2
2
Separate
M4
4
4
Separate
U8
4
4
Separate
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V)
Note: 1. Pb-free package.
ES :B
Design Revision
B = Second revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85C)
Speed Grade (synchronous mode only)
10 = 200 MT/s
Package Code
C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1
H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
A = First set of device features
PDF: 09005aef83d2277a
Rev. A 11/09 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.

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