2SA1952TLQ(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SA1952TLQ Datasheet PDF : 3 Pages
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High-speed Switching Transistor (-60V, -5A)
2SA1952
Features
1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)
2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Absolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−60
−5
−5
−10
1
10
150
−55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
Dimensions (Unit : mm)
2SA1952
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Packaging specifications and hFE
Type
2SA1952
Package
hFE
Code
Basic ordering unit (pieces)
CPT3
Q
TL
2500
Electrical characteristics (Ta = 25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
VBE(sat)
hFE1
hFE2
fT
Cob
ton
tstg
tf
Min.
−100
−60
−5
−
−
−
−
−
−
120
40
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
80
130
−
−
−
Max.
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
270
−
−
−
0.3
1.5
0.3
Unit
V
V
V
μA
μA
V
V
V
V
−
−
MHz
pF
μs
μs
μs
Conditions
IC = −50μA
IC = −1mA
IE = −50μA
VCB = −100V
VEB = −5V
IC/IB= −3A/ −0.15A
IC/IB= −4A/ −0.2A
IC/IB= −3A/ −0.15A
IC/IB= −4A /−0.2A
VCE = −2V , IC = −1A
VCE = −2V , IC = −3A
VCE = −10V , IE = 0.5A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
IC = −3A , RL = 10Ω
IB1 = −IB2 = −0.15A
VCC −30V
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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