2SA1952TL(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SA1952TL
(Rev.:2009)

High-speed Switching Transistor (-60V, -5A)

ROHM Semiconductor 

2SA1952

Electrical characteristics curves

−5

−90m−A80mA

−70mA Tc =25°C

−60mA

−4

−50mA

−3

−40mA

−30mA

−2

−20mA

−1

−10mA

0

IB=0A

0

−1

−2

−3

−4

−5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Ground emitter output characteristics

−10

−5 Ta=100°C

25°C

−2

−25°C

−1

−0.5

VCE= −2V

Pulsed

−0.2

−0.1

−0.05

−0.02

−0.01

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Ground emitter propagation characteristics

−10

−5

Ta= −25°C

−2

25°C

−1

100°C

−0.5

IC/IB=20

Pulsed

VBE(sat)

−0.2

−0.1

−0.05

VCE(sat)

Ta=100°C

25°C

−0.02

−0.01

−25°C

−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10

COLLECTOR CURRENT : IC (A)

Fig.4

Collector-emitter saturation voltage

Base-emitter saturation voltage

vs.

collector

current

10

5

2 tstg

ton

1

tf

0.5

IE=20IB1= −20IB2

0.2

0.1

0.05

0.02

0.01

−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50

COLLECTOR CURRENT : IC (A)

Fig.7 Switching characteristics

1000

Ta=25°C

500

VCE= −10A

200

100

50

20

10

5

2

1

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1

EMITTER CURRENT : IE (A)

Fig.5 Resistance ratio vs. emitter current

Data Sheet

1000

VCE= −2V

500

Pulsed

200

100

50

Ta=100°C

25°C

20

−25°C

10

5

2

1

−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10

COLLECTOR CURRENT : IC (A)

Fig.3 DC current gain vs. collector current

10000

Ta=25°C

5000

f=1MHz

IE=0A

2000

1000

500

200

100

50

20

10

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.6 Collector output capacitance

vs. collector-base voltage

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2009.12 - Rev.A

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