2SC5662(2010) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SC5662 Datasheet PDF : 3 Pages
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High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Features
1) High transition frequency. (Typ. fT= 3.2GHz)
2) Small rbb’Cc and high gain. (Typ. 4ps)
3) Small NF.
Packaging specifications and hFE
Type
2SC5662 2SC4726
Package
VMT3
EMT3
hFE
NP
NP
Marking
AD
AD
Code
T2L
TL
Basic ordering unit
(pieces)
8000
3000
2SC4083
UMT3
NP
1D
T106
3000
2SC3838K
SMT3
NP
AD
T146
3000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power
dissipation
2SC5662, 2SC4726
2SC4083, 2SC3838K
PC
0.15
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Dimensions (Unit : mm)
2SC5662
1.2
0.32
(3)
ROHM : VMT3
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
2SC4726
1.6
0.7
0.3
0.55
(3)
ROHM : EMT3
EIAJ : SC-75A
(2) (1)
0.2
0.2
0.15
0.5 0.5
1.0
2SC4083
2.0
0.3
(3)
0.9
0.2 0.7
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
2SC3838K
(2)
(1)
0.65 0.65
1.3
2.9
0.4
(3)
(1) Emitter
0.15
(2) Base
(3) Collector
Each lead has same dimensions
1.1
0.8
ROHM : SMT3
EIAJ : SC-59
(2)
(1)
0.95 0.95
1.9
(1) Emitter
(2) Base
0.15
(3) Collector
Each lead has same dimensions
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
20
−
−
V
IC = 10μA
BVCEO
11
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
3
−
−
V
IE = 10μA
Collector cutoff current
ICBO
−
−
0.5
μA VCB = 10V
Emitter cutoff current
IEBO
−
−
0.5
μA VEB = 2V
Collector-emitter saturation voltage
VCE(sat)
−
−
0.5
V
IC/IB = 10mA/5mA
DC current
transfer ratio
2SC5662, 2SC4726,
2SC4083, 2SC3838K
hFE
56
−
180
−
VCE/IC = 10V/5mA
Transition frequency
fT
1.4
3.2
−
GHz VCE = 10V , IE = −10mA , f = 500MHz
Output capacitance
Cob
−
0.8
1.5
pF VCB = 10V , IE = 0A , f = 1MHz
Collector-base time constant
rbb'⋅Cc
−
4
12
ps VCB = 10V , IC = 10mA , f = 31.8MHz
Noise factor
NF
−
3.5
−
dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
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