Transistors
2SC4410
Silicon NPN epitaxial planar type
For UHF amplification
Unit: mm
0.3+–00..01
0.15+–00..0150
■ Features
3
• Allowing the small current and low voltage operation
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.65) (0.65)
1.3±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
10
V
c e. d ty Collector-emitter voltage (Base open) VCEO
7
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
V
a e cle con Collector current
IC
10
mA
lifecy , dis Collector power dissipation
PC
50
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
10˚
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
SMini3-G1 Package
Marking Symbol: 2X
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.5 V, IC = 0
M is con inten Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
/Dis ma Transition frequency
fT
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
ce pe, Collector output capacitance
D nan e ty (Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1
µA
1
µA
50
200
4
GHz
0.4
pF
inte anc Foward transfer gain
Ma inten Maximum unilateral power gain
d ma Noise figure
S21e2
GUM
NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6.0
dB
15
dB
3.5
dB
(plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure
Publication date: March 2004
SJC00155BED
1