2SK3568(2006) 데이터 시트보기 (PDF) - Toshiba
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2SK3568 Datasheet PDF : 6 Pages
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2SK3568
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30 ⎯
⎯
V
IDSS
VDS = 500 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
500 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 6 A
⎯
0.4 0.52
Ω
⎪Yfs⎪
VDS = 10 V, ID = 6 A
3.5 8.5
⎯
S
Ciss
⎯ 1500 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
15
⎯
pF
Coss
⎯ 180 ⎯
tr
10 V
VGS
ID = 6 A VOUT
⎯
22
⎯
0V
ton
50 Ω
RL =
⎯
50
⎯
33 Ω
ns
tf
⎯
36
⎯
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 μs
⎯ 170 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 12 A
Qgd
⎯
42
⎯
⎯
23
⎯
nC
⎯
19
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
12
A
⎯
⎯
48
A
⎯
⎯
−1.7
V
⎯ 1200 ⎯
ns
⎯
16
⎯
μC
Marking
K3568
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
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