2SD2662 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SD2662

NPN 1.5A 30V Middle Power Transistor

ROHM Semiconductor 

2SD2662

lElectrical characteristic curves(Ta = 25°C)

Data Sheet

Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics

1

5.0mA

4.0mA

3.5mA

0.8

0.6

for 3.0mA

2.5mA

2.0mA

ndeds BASE TO EMITTER VOLTAGE : VBE [V]

1.5mA

0.4

1.0mA

0.2

IB= 0.5mA

Ta=25ºC

Pulsed

0

0

1

2

3

4

5

COLECTOR TO EMITTE VOLTAGE : VCE [V]

me sign Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC Current Gain vs. Collector Current(II)

om De1000

Ta=25ºC

Pulsed

ec VCE= 5V

w 2V

100

Not R Ne 10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC [A]

COLLECTOR CURRENT : IC [A]

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3/6

2013.07 - Rev.C

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